The new standard retains the Wide I/O vertically stacked through silicon via (TSV) form factor, but it boosts speed significantly (by 4X) and changes the power supply. Specifically, the new Wide I/O 2 standard supports up to 68 GByte/s memory bandwidth from a 1.1 V supply. It is aimed at smartphone, tablet, and gaming applications. The expectation is that the Wide I/O 2 and the new LPDDR4 will be part of a toolbox for mobile memory designers, offering options in both horizontal and vertical (3D) architectures.

Key specifications: Number of channels: 4 and 8 Number of banks: 32 per die Density: 8 Gb to 32 Gb Page size: 4 kB (4-channel die), 2 kB (8-channel die) Max bandwidth per die: 34 GB/s (4-channel die) and 68 GB/s (8-channel die) respectively Max I/O speed: 1066 Mbit/s, 800 Mbit/s, and 1066 Mbit/s speed bin defined Operating Supply Voltage: 1.1V

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